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Single Phase Rectifier Bridge

PSB 55

IdAVM VRRM

= 50 A = 800-1800 V

Preliminary Data Sheet VRSM V 800 1200 1400 1600 1800

VRRM V 800 1200 1400 1600 1800

Type PSB 55/08 PSB 55/12 PSB 55/14 PSB 55/16 PSB 55/18

~ ~

Symbol

Test Conditions

IdAVM IFSM

TC = 64°C, module TVJ = 45°C t = 10 ms (50 Hz), sine VR = 0 t = 8.3 ms (60 Hz), sine

50 750 820

A A A

TVJ = TVJM VR = 0

t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine

670 740

A A

TVJ = 45°C VR = 0

t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine

2800 2820

A2 s A2 s

TVJ = TVJM VR = 0

t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine

2250 2300

A2 s A2 s

-40 ... + 150 150 -40 ... + 150

°C °C °C

2500 3000

V∼ V∼

5 3 200

Nm Nm g

∫ i2 dt

TVJ TVJM Tstg VISOL Md Weight

50/60 HZ, RMS IISOL ≤ 1 mA

Maximum Ratings

t = 1 min t=1s

Mounting torque Terminal connection torque typ.

(M5) (M5)

Features • Package with screw terminals • Isolation voltage 3000 V∼ • Planar glasspassivated chips • Blocking voltage up to 1800 V • Low forward voltage drop • UL registered E 148688 Applications • Supplies for DC power equipment • Input rectifiers for PWM inverter • Battery DC power supplies • Field supply for DC motors Advantages • Easy to mount with two screws • Space and weight savings • Improved temperature and power cycling capability Package, style and outline Dimensions in mm (1mm = 0.0394“)

Symbol

Test Conditions

Characteristic Value

IR

VR = VRRM VR = VRRM

≤ ≤

0.3 10.0

mA mA

VF VTO rT RthJC

IF = 150 A TVJ = 25°C For power-loss calculations only TVJ = TVJM

1.6 0.85 8

V V mΩ

per diode; DC current per module

2.6 0.65

K/W K/W

RthJK

per diode; DC current per module

2.84 0.71

K/W K/W

dS dA a

Creeping distance on surface Creeping distance in air Max. allowable acceleration

7.8 7.8 50

mm mm m/s2

TVJ = 25°C TVJ = TVJM

POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20

 2003 POWERSEM reserves the right to change limits, test conditions and dimensions


PSB 55 200 [A]

1:TVJ= 150°C

IF(OV) -----IFSM

2:TVJ= 25°C

150

4 10 2 As

IFSM (A) TVJ=45°C TVJ=150°C

1.6

750

670 TVJ=45°C

1.4

100

1.2

10

3

TVJ=150°C

1 0 VRRM

50

0.8 1/2 VRRM

IF

1

0 0.5

0.6

2 1 1.5 VF[V]

2

10

2.5

0.4

0

1

10

Fig. 1 Forward current versus voltage drop per diode

100 [W]

1 VRRM

10

2

3

t[ms] 10

85

TC 0.6 0.35

90

= RTHCA [K/W]

4 t [ms]

70

105

60

10

DC sin.180° rec.120° re c.60° .30°

[A]

100

1.35

6

Fig. 3 ∫i2dt versus time (1-10ms) per diode (or thyristor)

95

0.85

80

2

1

10

Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration

PSB 55

2

50

110 115 120

2.35

40 DC sin.180° rec.120° rec.60° rec.30°

20 PVTOT 0

125 130 135

5.35

140 145

°C

150

10 IFAVM

30

30

[A]

0

Tamb

50

100

[K]

150

Fig. 4 Power dissipation versus direct output current and ambient temperature

10 IdAV 0 50

100

150

20

T C(°C)

Fig.5 Maximum forward current at case temperature

4 K/W Z thJK Z thJC

3

2

1 Z th

0.01

0.1

t[s]

1

10

Fig. 6 Transient thermal impedance per diode (or thyristor), calculated POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20

 2003 POWERSEM reserves the right to change limits, test conditions and dimensions


Catalogo POWERSEM PSB55