Page 1

SKM 150GB123D 3 4 /5 6*     #

Absolute Maximum Ratings Symbol Conditions IGBT

Values

38 4 /5 6*

*7

&*

./00

38 4 .50 6*

&*;

3 4 /5 6*

.50

+

3 4 :0 6*

..0

+

/00

+

&*;4/%&* 

= /0

<7

SEMITRANSÂŽ 3 IGBT Modules



.0

A

3 4 /5 6*

.50

+

3 4 :0 6*

.00

+

/00

+

38 4 .50 6*

..00

+

3 4 /5 6*

/00

+

3 4 :0 6*

.C5

+

C00

+

.DD0

+

500

+

38

' D0 BBB E .50

6*

3 

'D0 BBB E ./5

6*

**

4 $00 >

*7

<7

@ ./00

? /0 >

38 4 ./5 6*

Inverse Diode &(

38 4 .50 6*

&(;

&(;4/%&( 

SKM 150GB123D

&(

4 .0 >  B

SKM 150GAL123D

Freewheeling Diode &(

38 4 .50 6*

&(;

Features                         !            

            " ! #     $ % &   ' # ( ) #   *+  &  

 "     ,*- , *

 -      ./         /0 

Typical Applications*  +*      12

&(

4 .0 >  B

38 4 .50 6*

Module & ;



+* .  B

/500

3 4 /5 6*     #

Characteristics Symbol Conditions IGBT <7 

&*7

<7

4

*7 &*

<7

40 

min.

typ.

max.

D5

55

$5

0.

0C

38 4 /5 6*

.D

.$

38 4 ./5 6*

.$

.:

38 4 /56*

..

.D

F

38 4 ./56*

.5

.G

F

38 4 6* B

/5

C

# 4 . H

$5 .

:5 .5

( (

05

0$

(

4 D +

*7

4

*7

38 4 /5 6* 38 4 ./5 6*

*70

*7

*7  

* *

<7 4 .5

&*  4 .00 + *7 4 /5

<7

4 .5

<7 4 0

* I< ;<

  

 7

 ##

#

<7

4 ': ' E/0

38 4 6* ;< 4 $: F ;<## 4 $: F

7## ;  8'

GB

1

Units

4 $00 &*4 .00+ 38 4 ./5 6* <7 4 = .5 **

+ +

.000

*

/5

J

.$0 :0 .C D00 L0

C/0 .$0 5/0 .00

..

 &<-3

Units

  K   K

0.5

MNO

GAL

11-09-2006 RAA

Š by SEMIKRON


SKM 150GB123D Characteristics Symbol Conditions Inverse Diode (

4

&(  4 .00 +>

7*

min. <7

40

(0

typ.

max.

38 4 /5 6* B

/

/5

38 4 ./5 6* B

.:

38 4 /5 6*

..

./

G

.C

Units

38 4 ./5 6* (

ÂŽ

SEMITRANS 3 IGBT Modules

38 4 /5 6* 38 4 ./5 6*

&;; I

&( 4 .00 + N 4 .000 +NA

7

<7

;  8',

40 >

**

F F

38 4 ./5 6*

50 5

+ A*

4 $00

K

 

0C

MNO

Freewheeling Diode SKM 150GB123D SKM 150GAL123D

(

4

&(  4 .50 +>

7*

<7

40

(0

38 4 /5 6* B

/

38 4 ./5 6* B

.:

/5

38 4 /5 6*

..

./

$

:L

38 4 ./5 6* (

38 4 /5 6* 38 4 ./5 6*

Features                         !            

            " ! #     $ % &   ' # ( ) #   *+  &  

 "     ,*- , *

 -      ./         /0 

Typical Applications*  +*      12

&;; I

&( 4 .00 +

7

<7

;  8'(,

40 >

38 4 /5 6* **

D0 5

+ A*

4 $00

K

 

0/5

MNO

Module *7 ;**PE77P

.5 B  '

;  '

  



   Q $



   $



/0



34 /5 6*

0C5

F

34 ./5 6*

05

F 00C:

MNO

C

5



/5

5



C/5



This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal.

GB

2

GAL

11-09-2006 RAA

Š by SEMIKRON


SKM 150GB123D

SEMITRANS® 3

Zth Symbol Zth(j-c)l

Conditions

Values

Units

; ; ; ;

 

 

 

4. 4/ 4C 4D 4. 4/ 4C

.05 C5 : / 00C 00C 000.D

QNO QNO QNO QNO   

 

4D

0000.



; ; ; ;

 

 

 

4. 4/ 4C 4D 4. 4/ 4C

/.0 L0 .$ D 00$/C 000:C 000C

QNO QNO QNO QNO   

 

4D

0000/



Zth(j-c)D

IGBT Modules SKM 150GB123D SKM 150GAL123D

Features                         !            

            " ! #     $ % &   ' # ( ) #   *+  &  

 "     ,*- , *

 -      ./         /0 

Typical Applications*  +*      12

GB

3

GAL

11-09-2006 RAA

© by SEMIKRON


SKM 150GB123D

Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'

Fig. 2 Rated current vs. temperature IC = f (TC)

Fig. 3 Typ. turn-on /-off energy = f (IC)

Fig. 4 Typ. turn-on /-off energy = f (RG)

Fig. 5 Typ. transfer characteristic

Fig. 6 Typ. gate charge characteristic

4

11-09-2006 RAA

Š by SEMIKRON


SKM 150GB123D

Fig. 7 Typ. switching times vs. IC

Fig. 8 Typ. switching times vs. gate resistor RG

Fig. 9 Transient thermal impedance of IGBT

Fig. 10 Transient thermal impedance of FWD

Zthp(j-c) = f (tp); D = tp/tc = tp*f

Zthp(j-c) = f (tp); D = tp/tc = tp*f

Fig. 11 CAL diode forward characteristic

Fig. 12 Typ. CAL diode peak reverse recovery current

5

11-09-2006 RAA

Š by SEMIKRON


SKM 150GB123D UL Recognized

File no. E63 532

* , 5$

<-

6

* , 5$

<+

* , 5L R , 5$

11-09-2006 RAA

© by SEMIKRON

Modulo IGBT SEMIKRON SKM 150GB123D  

Modulo IGBT SEMIKRON SKM 150GB123D

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