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Field Effect Transistor Experiment Abstract The characteristics of a Field Effect Transistor (FET) would be measured by this experiment. “The field-effect transistor (FET) is a transistor that relies on an electric field to control the shape and hence the conductivity of a 'channel' in a semiconductor material.” ① FET is a semiconductor device that can control electric current. The transistor used in this experiment is a Junction Field Effect Transistor (JFET). The three connections to the JFET are showed in the figure ② ②. The voltage between source and drain is called VDS and the voltage between the gate and the source is called VGS. Groups of data of current varied with VDS were obtained and a whole family of IV characteristics was obtained. By plotting the graphs, IDSS was found to be 2.41. Therefore, VP was computed to be 1.93. PROCEDURE Set up the apparatus as shown below. An n-channel JFET was connected to the control boxes, the potentiometers on the control box should be fully anticlockwise and the selector knob should in the OFF position. Turn on the power supply unit. The selector knobs switched between VGS, VDS and ID which are measured using the multimeter. Began with VGS=0, -0.2, -0.4, -0.6, -0.8, 1. and varied VDS. Measure the corresponding ID. Plot the family of IV characteristics obtained and plot the transconductance

Lab report field effect transistor experiment

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